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S25FS512SAGBHM210
  • S25FS512SAGBHM210

S25FS512SAGBHM210

Active and preferred

The S25FS512SAGBHM210 is a 512 Mb automotive-grade SPI NOR Flash memory operating from 1.7 V to 2.0 V, qualified to AEC-Q100 Grade 1 (-40°C to +125°C). Built on 65-nm MIRRORBIT™ technology and Eclipse architecture, it supports up to 133 MHz SDR and 80 MB/s DDR Quad I/O read rates. Features include hybrid and uniform sectors, 256/512-byte page programming, advanced sector protection, and 100,000 program-erase cycles. Ideal for code storage, XIP, and automotive data logging.

Infineon Technologies S25FS512SAGBHM210 Product Info

16 April 2026 0

Parameters

Classification

ISO 26262-ready

Density

512 MBit

Family

FS-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • SPI interface with multi-I/O support
  • Supports clock modes 0 and 3
  • Double data rate (DDR) option
  • 24- or 32-bit addressing
  • Compatible command set with S25FL families
  • Multiple read modes: Normal, Fast, Dual
  • Burst wrap, continuous (XIP), QPI modes
  • 256/512-byte page programming buffer
  • Internal ECC with single bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum

Description

  • Flexible I/O enables faster data transfer
  • DDR option boosts throughput
  • Large page buffer increases programming speed
  • ECC improves data reliability
  • Multiple erase options suit varied designs
  • High endurance for long device life
  • Long data retention secures information
  • Low voltage reduces power consumption
  • Deep power-down saves energy
  • OTP array enhances system security
  • Advanced protection prevents unauthorized
  • Compatible with existing designs

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