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S25FS256SAGMFV003
  • S25FS256SAGMFV003

S25FS256SAGMFV003

Active and preferred

The S25FS256SAGMFV003 is a 256 Mbit (32 MB) SPI NOR flash memory with 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. Operating from 1.7 V to 2.0 V, it supports up to 133 MHz clock rates and single, dual, and quad I/O, including DDR Quad I/O for 80 MBps reads. With flexible sector options, 100,000 program-erase cycles minimum, and 20-year data retention, it is AEC-Q100 Grade 1 qualified for automotive and embedded systems.

Infineon Technologies S25FS256SAGMFV003 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

FS-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • SPI interface with multi I/O support
  • DDR and QPI read modes
  • 256- or 512-byte page programming buffer
  • Internal ECC with single-bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 1.7 V to 2.0 V supply voltage
  • Operating temperature up to +125°C
  • Serial flash discoverable parameters (SFDP)
  • Advanced sector and block protection
  • 65-nm MIRRORBIT™ technology

Description

  • Flexible interface for various host systems
  • Fast data access with DDR and QPI modes
  • Efficient large or small page programming
  • Reliable data with built-in ECC
  • Versatile erase for different applications
  • High endurance for frequent updates
  • Long-term data storage reliability
  • Low voltage for energy-efficient designs
  • Robust operation in harsh environments
  • Easy configuration and compatibility
  • Enhanced security for sensitive data
  • Advanced process for high density/low cost

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