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S25FL128SDPBHV210
  • S25FL128SDPBHV210

S25FL128SDPBHV210

Active and preferred

The S25FL128SDPBHV210 is a 128 Mb SPI Multi-I/O NOR flash memory using 65-nm MIRRORBIT™ technology and Eclipse architecture for high program and erase performance. It supports single, dual, quad, and DDR SPI commands with read speeds up to 52 MBps (Quad, 104 MHz) and DDR up to 80 MBps.

Infineon Technologies S25FL128SDPBHV210 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

FL-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • DDR read commands for higher throughput
  • 256B/512B page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector protection (ASP)
  • Versatile I/O voltage range: 1.65 V to VCC
  • Operating temp: –40°C to +125°C

Description

  • High density, low-cost storage solution
  • Fast read/write boosts system performance
  • Flexible interface fits many host controllers
  • DDR/QIO enables high-speed data access
  • Large buffer improves programming efficiency
  • Multiple erase options ease migration
  • Reliable for frequent updates and code
  • Long retention ensures data integrity
  • OTP secures device identity and config
  • Sector protection prevents unwanted changes
  • Wide voltage range supports diverse systems
  • Broad temp range fits harsh environments

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