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S25FL128LAGMFV003
  • S25FL128LAGMFV003

S25FL128LAGMFV003

The S25FL128LAGMFV003 is a 128 Mb (16 MB) SPI NOR flash memory using 65-nm floating gate technology, supporting single, dual, and quad I/O up to 133 MHz. Operating from 2.7 V to 3.6 V and qualified to AEC-Q100 Grade 1 (–40°C to +125°C), it features a 256-byte page buffer, uniform 4 KB sector erase, advanced security regions, and 100,000 program/erase cycles. High throughput up to 66 MBps quad read and DDR operation make it ideal for automotive and embedded code storage.

Infineon Technologies S25FL128LAGMFV003 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

FL-L

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2032

Features

  • SPI interface with single, dual, quad I/O
  • Double data rate (DDR) read commands
  • 256-byte page programming buffer
  • Uniform 4 KB sector, 32 KB half block, 64 KB
  • Security regions with OTP lock bits
  • Deep Power Down (DPD) mode for data
  • 100,000 program/erase cycles minimum
  • 20 year data retention minimum
  • 2.7 V to 3.6 V single supply voltage
  • Input voltage tolerance: VSS-1.0 V to VCC+1.0
  • Hardware and software data protection
  • Operating temperature up to +125°C

Description

  • Flexible I/O supports faster data transfer
  • DDR read boosts system performance
  • Large buffer enables efficient programming
  • Multiple erase sizes simplify memory
  • Security regions prevent unauthorized access
  • DPD mode blocks accidental writes/erases
  • High endurance ensures long device life
  • Long retention secures critical data
  • Wide supply range fits many designs
  • Tolerates voltage transients for robust use
  • Data protection prevents corruption
  • Wide temp range suits harsh environments

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