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S25FL127SABBHV700
  • S25FL127SABBHV700

S25FL127SABBHV700

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The S25FL127SABBHV700 is a 128 Mb (16 MB) SPI NOR flash memory featuring 65 nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports up to 108 MHz clock (54 MBps Quad I/O), operates from 2.7 V to 3.6 V, and withstands -40°C to +105°C (AEC-Q100 Grade 2). With hybrid 4 KB/64 KB and uniform 256 KB erase, advanced security, 100,000 cycle endurance, and 20-year retention, it is ideal for automotive code storage, XIP, and embedded systems.

Infineon Technologies S25FL127SABBHV700 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

FL-S

Interface Bandwidth

54 MByte/s

Interface Frequency (SDR/DDR) (MHz)

108 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Qualification

Industrial

Features

  • CMOS 3.0 V core
  • SPI with multi-I/O
  • 24- or 32-bit address options
  • Normal, Fast, Dual, Quad READ
  • AutoBoot for automatic read on power-up
  • 256- or 512-byte page programming buffer
  • Hardware ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention (10K cycles)
  • One-time programmable (OTP) 1024 bytes
  • Block and advanced sector protection

Description

  • Multi-I/O SPI enables flexible system design
  • 32-bit addressing supports large memory maps
  • Quad READ boosts data throughput
  • AutoBoot simplifies system startup
  • Large page buffer accelerates programming
  • ECC ensures data reliability
  • Flexible erase options fit various
  • High endurance for frequent updates
  • Long retention secures critical data
  • OTP enables secure configuration
  • Sector protection prevents accidental writes
  • Wide supply and temp range for robust use

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