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S25FL064LABMFM013
  • S25FL064LABMFM013

S25FL064LABMFM013

Active and preferred

The S25FL064LABMFM013 is a 64 Mb (8 MB) FL-L NOR flash memory using 65-nm floating gate technology, supporting SPI with single, dual, and quad I/O, QPI, and DDR read. Operating from 2.7 V to 3.6 V, it supports up to 125°C (AEC-Q100 Grade 1). Features include 100,000 program-erase cycles, 20-year data retention, flexible erase options, advanced security regions, and up to 54 MBps read speed, ideal for automotive, industrial, and embedded storage.

Infineon Technologies S25FL064LABMFM013 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

FL-L

Interface Bandwidth

54 MByte/s

Interface Frequency (SDR/DDR) (MHz)

108 / 54

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2032

Qualification

Automotive

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Description

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

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