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S25FL064LABBHI020
  • S25FL064LABBHI020

S25FL064LABBHI020

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The S25FL064LABBHI020 is a 64 Mb SPI NOR flash memory using 65-nm floating gate technology, supporting up to 108 MHz SDR and 54 MHz DDR. It offers flexible read, program, and erase options including 256-byte page programming and uniform 4 KB sector, 32 KB half block, and 64 KB block erase. Operating from 2.7 V to 3.6 V, it meets automotive AEC-Q100 Grade 1 (-40°C to +125°C). Typical uses include code shadowing, XIP, and secure storage in automotive and embedded systems.

Infineon Technologies S25FL064LABBHI020 Product Info

16 April 2026 0

Parameters

Density

64 MBit

Family

FL-L

Interface Bandwidth

54 MByte/s

Interface Frequency (SDR/DDR) (MHz)

108 / 54

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2032

Qualification

Industrial

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Description

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

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