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ISZ173N15NM6
  • ISZ173N15NM6

ISZ173N15NM6

Active and preferred

Infineon Technologies ISZ173N15NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

48 A

IDpuls max

192 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3 x 3.3 Fused Lead

Polarity

N

Ptot max

94 W

QG (typ @10V)

14.8 nC

RDS (on) (@10V) max

17.3 mΩ

VDS max

150 V

VGS(th) range

3 V to 4 V

VGS(th)

3.5 V

Apps

Server power supply units (PSU), Telecommunications infrastructure, Battery energy storage (BESS), Photovoltaic, Industrial power supplies

Features

  • 42% lower RDS(on) than OptiMOS™ 5
  • 20% lower FOMg than OptiMOS™ 5
  • Industry's lowest Qrr in 150 V
  • Improved diode softness vs OptiMOS™ 5
  • Tight Vgs(th) spread of +/-500 mV
  • High avalanche ruggedness
  • Max Tj of 175°C

Description

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Optimized PCB area utilization
  • Enhanced robustness
  • Improved system reliability

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