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ISG0616N10NM5HSC
  • ISG0616N10NM5HSC

ISG0616N10NM5HSC

Active and preferred

Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Infineon Technologies ISG0616N10NM5HSC Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.04

ID (@25°C) max

139 A

Operating Temperature range

-55 °C to 175 °C

Package

Power Block 6.3x6

Polarity

N

QG (typ @10V)

52 nC

RDS (on) (@10V) max

4 mΩ

Special Features

Symmetrical Half-bridge, Dual-Side Cooling

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design
  • Dual-side cooling

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • High power capability
  • Superior thermal performance
  • Lowest loop inductance
  • Superior switching performance/EMI
  • Superior thermal management

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