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ISG0613N04NM6H
  • ISG0613N04NM6H

ISG0613N04NM6H

Active and preferred

Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The optimized lead-frame & Cu-clip significantly improves the package thermal performance.

Infineon Technologies ISG0613N04NM6H Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.59

ID (@25°C) max

299 A

Operating Temperature range

-55 °C to 175 °C

Package

Power Block 6.3x6

Polarity

N

QG (typ @10V)

69 nC

RDS (on) (@10V) max

0.88 mΩ

Special Features

Symmetrical Half-bridge

VDS max

40 V

VGS(th) range

1.8 V to 2.8 V

VGS(th)

2.3 V

Features

  • Cutting edge OptiMOS™ silicon technology
  • Outstanding FOMs
  • High chip/package ratio
  • Optimized lead-frame and Cu-clip design
  • Internally connected Q1/Q2 MOSFETs
  • Compact and simplified layout design

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • High power capability
  • Superior thermal performance
  • Lowest loop inductance
  • Superior switching performance/EMI

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