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ISC046N13NM6
  • ISC046N13NM6

ISC046N13NM6

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The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS. Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38% reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.

Infineon Technologies ISC046N13NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.8

ID (@25°C) max

142 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6

Polarity

N

QG (typ @10V)

65 nC

RDS (on) (@10V) max

4.6 mΩ

VDS max

135 V

VGS(th) range

2.5 V to 3.5 V

VGS(th)

3 V

Features

  • Up to 48% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Description

  • Size reduction enabled with SuperSO8 best-in-class
  • System cost reduction
  • Less paralleling required
  • Reduced VDS overshoot & switching losses
  • Higher power density designs

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