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ISC009N06NM6
  • ISC009N06NM6

ISC009N06NM6

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Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Infineon Technologies ISC009N06NM6 Product Info

16 April 2026 0

Parameters

ID (@25°C) max

344 A

Operating Temperature range

-55 °C to 175 °C

Package

SuperSO8 5x6 FL

Polarity

N

QG (typ @10V)

97 nC

RDS (on) (@10V) max

0.9 mΩ

VDS max

60 V

VGS(th) range

2.1 V to 3.3 V

VGS(th)

2.7 V

Apps

Server power supply units (PSU), Telecommunications infrastructure, General purpose motor drive, Battery management systems (BMS), DC-DC power conversion

Features

  • High performance silicon technology
  • Soft-switching optimized
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Description

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved performance efficiency
  • Superior power handling capability
  • Robust reliable performance

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