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IRFHM8363
  • IRFHM8363

IRFHM8363

Infineon Technologies IRFHM8363 Product Info

16 April 2026 0

Parameters

ID (@ TA=25°C) max

11 A, 11 A

Moisture Sensitivity Level

1

Package

PQFN 3.3 x 3.3

Polarity

N+N, N+N

Ptot (@ TA=25°C) max

2.7 W

Qgd (typ)

2 nC

QG

15 nC

RDS (on) max

14.9 mΩ

RDS (on) (@4.5V) max

20.4 mΩ

RDS (on) (@10V) max

14.9 mΩ

RthJA max

47 K/W

Tj max

150 °C

VDS max

30 V

VGS max

20 V

Description

  • RoHS Compliant
  • Low RDS(on)
  • Low Profile (less than 1.1 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified MSL1
  • Dual N-Channel MOSFET

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