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IRFB52N15D
  • IRFB52N15D

IRFB52N15D

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The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRFB52N15D Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.97

ID (@25°C) max

51 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Polarity

N

Ptot max

320 W

Qgd

28 nC

QG (typ @10V)

60 nC

RDS (on) (@10V) max

32 mΩ

RthJC max

0.47 K/W

Tj max

175 °C

VDS max

150 V

VGS(th) range

3 V to 5 V

VGS(th)

4 V

VGS max

30 V

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard through-hole power
  • High-current rating

Description

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification
  • High performance, low-frequency
  • Standard pinout, drop-in replacement
  • High current capability

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