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IRF6797M
  • IRF6797M

IRF6797M

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon Technologies IRF6797M Product Info

16 April 2026 0

Parameters

ID (@25°C) max

210 A

Micro-stencil

IRF66MX-25

Moisture Sensitivity Level

1

Mounting

SMD

Package

DirectFET(M)

Polarity

N

Ptot max

89 W

Ptot (@ TA=25°C) max

2.8 W

Qgd

13 nC

QG (typ @4.5V)

45 nC

RDS (on) (@10V) max

1.4 mΩ

RDS (on) (@4.5V) max

2.4 mΩ

RthJC max

1.4 K/W

Special Features

Schottky (includes Schottky like and FETky)

Tj max

150 °C

VDS max

25 V

VGS(th) range

1.35 V to 2.35 V

VGS(th)

1.8 V

VGS max

20 V

Features

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

Description

  • Wide availability from distribution partners
  • Industry standard qualification level
  • High current carrying capability
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

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