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IRF60SC241
  • IRF60SC241

IRF60SC241

Infineon’s latest 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Infineon Technologies IRF60SC241 Product Info

16 April 2026 0

Parameters

Battery voltage

24-36 V

Budgetary Price €/1k

1.79

ID (@25°C) max

360 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7pin (TO-263 7pin)

Polarity

N

Ptot (@ TA=25°C) max

2.4 W

Qgd

95 nC

QG (typ @10V)

311 nC

RDS (on) (@10V) max

1.3 mΩ

Tj max

175 °C

VDS max

60 V

VGS(th) range

2.2 V to 3.7 V

VGS max

20 V

Features

  • Low RDS(on)
  • High current capability
  • Industry standard package
  • Flexible pinout
  • Optimized for 10 V gate drive

Description

  • Reduction in conduction losses
  • Increased power density
  • Drop in replacement to existing devices
  • Offers design flexibility
  • Provides immunity to false turn-on in noisy environments

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