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IRF5801
  • IRF5801

IRF5801

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The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon Technologies IRF5801 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.11

ID (@25°C) max

0.6 A

Moisture Sensitivity Level

1

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

TSOP-6

Polarity

N

Ptot (@ TA=25°C) max

2 W

Ptot max

2 W

Qgd

2.2 nC

QG (typ @10V)

3.9 nC

RDS (on) (@10V) max

2200 mΩ

RthJA max

62.5 K/W

Special Features

Small Power

Tj max

150 °C

VDS max

200 V

VGS(th) range

3 V to 5.5 V

VGS(th)

4.25 V

VGS max

30 V

Apps

Home and building automation

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard surface-mount power

Description

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification level
  • High performance, low-frequency
  • Standard pinout, drop-in replacement

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