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IRF150DM115
  • IRF150DM115

IRF150DM115

Active and preferred

Infineon Technologies IRF150DM115 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.26

ID (@25°C) max

60 A

Operating Temperature range

-40 °C to 150 °C

Package

DirectFET

Polarity

N

QG (typ @10V)

33 nC

RDS (on) (@10V) max

11.3 mΩ

VDS max

150 V

VGS(th) range

3 V to 4.6 V

VGS(th)

3.8 V

Features

  • Double-side-cooled package
  • Low parasitic inductance
  • Low profile design
  • High current capability
  • 100% lead-free (no RoHS exemption)

Description

  • Enables designs with high power density
  • High efficiency
  • Minimized EMI
  • Optimized thermals
  • Board space reduction
  • Less device paralleling

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