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IR21364S
  • IR21364S

IR21364S

Active

The 600V three-phase gate driver IC for IGBTs and MOSFETs features 0.2A source, 0.35A sink current, 10.4V/9.4V UVLO, 500ns/530ns propagation delay, and a 0.46V VITRIP threshold in a SOIC-28 wide body package. It includes an integrated bootstrap diode (BSD) for improved negative transient voltage robustness up to -100V, with 50% lower level shift losses. Explore Infineon's SOI 600V three-phase gate driver options for enhanced performance.

Infineon Technologies IR21364S Product Info

16 April 2026 0

Parameters

Channels

6

Configuration

Three Phase

Input Vcc range

11.5 V to 20 V

Isolation Type

Functional levelshift JI (Junction Isolated)

Output Current (Sink)

0.35 A

Output Current (Source)

0.2 A

Qualification

Industrial

Turn Off Propagation Delay

530 ns

Turn On Propagation Delay

500 ns

VBS UVLO (Off)

9.4 V

VBS UVLO (On)

10.4 V

VCC UVLO (Off)

9.4 V

VCC UVLO (On)

10.4 V

Voltage Class

600 V

Apps

General purpose motor drive

Features

  • Floating channel for bootstrap op.
  • Fully operational to +600 V
  • Tolerant to neg. transient volt.
  • dV/dt immune
  • Gate drive supply: 10 V to 20 V
  • Over-current shutdown
  • Under-voltage lockout for all chan.
  • Over-current shutdown
  • Independent 3 half-bridge drivers
  • Matched prop. delay for all chan.
  • Cross-conduction prevention logic
  • 3.3 V logic compatible

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