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IQE046N08LM5SC
  • IQE046N08LM5SC

IQE046N08LM5SC

Active and preferred

IQE046N08LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE046N08LM5SC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Infineon Technologies IQE046N08LM5SC Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.02

ID (@25°C) max

99 A

IDpuls max

396 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

19 nC

QG (typ @10V)

38 nC

RDS (on) (@10V) max

4.6 mΩ

RDS (on) (@4.5V) max

5.9 mΩ

Special Features

Logic Level, Dual-Side Cooling

VDS max

80 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr
  • Reduced RDS(on) by up to 30%
  • Improved RthJCover PQFN
  • New, optimized layout possibilities

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Reduced PCB losses

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