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IQE046N08LM5CGSC
  • IQE046N08LM5CGSC

IQE046N08LM5CGSC

Active and preferred

IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE046N08LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers

Infineon Technologies IQE046N08LM5CGSC Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.28

ID (@25°C) max

99 A

IDpuls max

396 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

19 nC

QG (typ @10V)

38 nC

RDS (on) (@10V) max

4.6 mΩ

RDS (on) (@4.5V) max

5.9 mΩ

Special Features

Logic Level, Center-Gate Dual-Side Cooling

VDS max

80 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr and QOSS
  • Reduced RDS(on) by up to 30% compared 
  • Improved RthJC over current PQFN
  • New, optimized layout possibilities
  • Center Gate optimized for paralleling

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization

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