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IQE022N06LM5CG
  • IQE022N06LM5CG

IQE022N06LM5CG

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IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the new PQFN 3.3x3.3 Center-Gate package, IQE022N06LM5CG is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Infineon Technologies IQE022N06LM5CG Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.96

ID (@25°C) max

151 A

IDpuls max

604 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

26 nC

QG (typ @10V)

53 nC

RDS (on) (@10V) max

2.2 mΩ

RDS (on) (@4.5V) max

2.9 mΩ

Special Features

Logic Level, Center-Gate

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level allows lower Qrr
  • Reduced RDS(on)by up to 30%
  • Reduced RthJC vs. existing PQFN
  • Center Gate optimized for paralleling

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization

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