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IQE022N06LM5
  • IQE022N06LM5

IQE022N06LM5

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IQE022N06LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE022N06LM5 is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

Infineon Technologies IQE022N06LM5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.96

ID (@25°C) max

151 A

IDpuls max

604 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

100 W

QG (typ @4.5V)

26 nC

QG (typ @10V)

53 nC

RDS (on) (@10V) max

2.2 mΩ

RDS (on) (@4.5V) max

2.9 mΩ

Special Features

Logic Level

VDS max

60 V

VGS(th) range

1.1 V to 2.3 V

VGS(th)

1.7 V

Features

  • Logic level for low Qrr&QOSS
  • Reduced RDS(on)by up to 30%
  • Reduced RthJC vs. existing PQFN
  • New, optimized layout possibilities

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Reduced PCB losses

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