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IQE020N04LM6CGSC
  • IQE020N04LM6CGSC

IQE020N04LM6CGSC

Active and preferred

IQE020N04LM6CG, OptiMOS™ 6 40 V power MOSFET, 2.0 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Dual-Side cooled package with Center-Gate footprint enables easy design-in on space-constrained PCB areas. A best-price approach disrupts the status quo by delivering exceptional power density and a minimized form factor in end applications, enabling a compact design and optimizing the end user experience while offering best price-performance.

Infineon Technologies IQE020N04LM6CGSC Product Info

16 April 2026 0

Parameters

ID (@25°C) max

166 A

IDpuls max

664 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

107 W

QG (typ @10V)

25 nC

QG (typ @4.5V)

12.1 nC

RDS (on) (@10V) max

2.05 mΩ

RDS (on) (@4.5V) max

2.9 mΩ

RthJC max

1.4 K/W

Special Features

Logic Level, Dual-Side Cooling

VDS max

40 V

VGS(th) range

1.3 V to 2.3 V

VGS(th)

1.6 V

Apps

Medium voltage IBC (48 V), Telecommunications infrastructure, Cordless power tools and outdoor power equipment

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance
  • Package with dual-side cooling variant

Description

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price
  • Superior thermal capabilities

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