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IQE012N03LM5CG
  • IQE012N03LM5CG

IQE012N03LM5CG

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IQE012N03LM5CG, OptiMOS™ 5 30 V power MOSFET, 1.20 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Center-Gate offers a flipped chip design connecting the source potential directly to the PCB over the thermal pad, giving several advantages, such as increased thermal capability, advanced power density and improved layout possibilities in a Center-Gate footprint for easy design-in on space-constrained PCB areas.

Infineon Technologies IQE012N03LM5CG Product Info

16 April 2026 0

Parameters

ID (@25°C) max

224 A

IDpuls max

896 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

Ptot max

107 W

QG (typ @10V)

40 nC

QG (typ @4.5V)

18.9 nC

RDS (on) (@10V) max

1.15 mΩ

RDS (on) (@4.5V) max

1.55 mΩ

RthJC max

1.4 K/W

VDS max

30 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Apps

Medium voltage IBC (48 V), Telecommunications infrastructure, Power tools

Features

  • Extended gate voltage rating
  • 175°C temperature rating
  • Best price performance

Description

  • Gate voltage overdrive
  • Fast charge & discharge of Cg
  • Increased reliability
  • High power density
  • Competitive price

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