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IQDH29NE2LM5
  • IQDH29NE2LM5

IQDH29NE2LM5

Active and preferred

The power MOSFET IQDH29NE2LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

Infineon Technologies IQDH29NE2LM5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

1.47

ID (@25°C) max

789 A

IDpuls max

3156 A

Mounting

SMD

Operating Temperature range

-55 °C to 150 °C

Package

PQFN 5x6 Source-Down

Polarity

N

QG (typ @4.5V)

88 nC

QG (typ @10V)

191 nC

RDS (on) (@10V) max

0.29 mΩ

RDS (on) (@4.5V) max

0.35 mΩ

Special Features

Logic Level

VDS max

25 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Features

  • Cutting edge 25 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

Description

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

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