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IPT020N13NM6
  • IPT020N13NM6

IPT020N13NM6

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This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In TOLL, OptiMOS™ 6 135 V achieves ~48% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low vgsth spread leads to improved dynamic current sharing, that enables you to reduce  the number of MOSFETs and lowers the system costs.

Infineon Technologies IPT020N13NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.17

ID (@25°C) max

297 A

Operating Temperature range

-55 °C to 175 °C

Package

TOLL (HSOF-8)

Polarity

N

QG (typ @10V)

159 nC

RDS (on) (@10V) max

2 mΩ

VDS max

135 V

VGS(th) range

2.5 V to 3.5 V

VGS(th)

3 V

Features

  • Up to 48% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)

Description

  • System cost reduction
  • Lower conduction losses and increased output power
  • Less paralleling required
  • Reduced VDS overshoot & switching losses
  • Higher power density designs

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