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IPT012N08N5
  • IPT012N08N5

IPT012N08N5

Active and preferred

Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.

Infineon Technologies IPT012N08N5 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

2.51

Ciss

13000 pF

Coss

2000 pF

ID (@25°C) max

300 A

IDpuls max

1200 A

Operating Temperature range

-55 °C to 175 °C

Package

TOLL (HSOF-8)

Pin Count

8 Pins

Polarity

N

Ptot max

375 W

QG (typ @10V)

178 nC

RDS (on) (@10V) max

1.2 mΩ

RthJA max

62 K/W

RthJC max

0.4 K/W

Rth

0.4 K/W

VDS max

80 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Apps

Multicopters and drones, DIN rail power supply solutions, General purpose motor drive, Domestic robots

Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Capacitance reduction of up to 44%
  • 43% lower Rds(on) vs. previous gen

Description

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

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