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IPP129N10NF2S
  • IPP129N10NF2S

IPP129N10NF2S

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Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 12.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP129N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Infineon Technologies IPP129N10NF2S Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.47

ID (@25°C) max

52 A

IDpuls max

208 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-220

Pin Count

3 Pins

Polarity

N

Ptot max

71 W

QG (typ @10V)

19 nC

RDS (on) (@10V) max

12.9 mΩ

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high & low switching frequency
  • Industry standard footprint package
  • High current rating
  • Capable of wave-soldering

Description

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard Pinout for Drop-In Replacement
  • Increased current carrying capability
  • Ease of manufacturing

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