Product
0
IPF021N13NM6
  • IPF021N13NM6

IPF021N13NM6

Active and preferred

This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.

Infineon Technologies IPF021N13NM6 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

3.03

ID (@25°C) max

250 A

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7pin (TO-263 7pin)

Polarity

N

QG (typ @10V)

160 nC

RDS (on) (@10V) max

2.1 mΩ

VDS max

135 V

VGS(th) range

2.5 V to 3.5 V

VGS(th)

3 V

Features

  • Up to 53% lower ON-state-resistance
  • Up to 38% lower gate threshold voltage spread
  • Up to 70% reduction of reverse recovery charge (Qrr)
  • Up to 45% lower peak reverse recovery current
    (-Irrm)

Description

  • System cost reduction
  • Lower conduction losses and increased output power
  • Lower EMI
  • Less paralleling required
  • Reduced VDS overshoot & switching losses
  • Higher power density designs

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8