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IPC70N04S5L-4R2
  • IPC70N04S5L-4R2

IPC70N04S5L-4R2

Active and preferred

Infineon Technologies IPC70N04S5L-4R2 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.27

Country of Assembly (Last BE site, current, subject to change)

Indonesia, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

70 A

IDpuls max

280 A

Launch year

2016

Operating Temperature range

-55 °C to 175 °C

Package

single SS08 (PG-TDSON-8)

Planned to be available until at least

2032

Polarity

N

Ptot max

50 W

QG (typ @10V) max

30 nC

QG (typ @10V)

22 nC

Qualification

Automotive

RDS (on) (@10V) max

4.2 mΩ

RthJC max

3 K/W

Technology

OptiMOS™5

VDS max

40 V

VGS(th) range

1.2 V to 2 V

VGS(th)

1.6 V

Apps

ADAS & autonomous driving, Domain controller for ADAS & autonomous driving, Automotive body control module (BCM), Automotive instrument cluster, High-performance cockpit controller

Features

  • OptiMOS™ power MOSFET
  • N-channel-Enhancement mode-Logic Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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