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IPC302N25N3
  • IPC302N25N3

IPC302N25N3

With OptiMOS™ 200V and 250V Infineon continues to deliver best-in-class on-state resistance (R DS(on)) power MOSFETs with unique performance. The leading R DS(on) and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet (PoE).

Infineon Technologies IPC302N25N3 Product Info

16 April 2026 0

Parameters

Die Size (Y)

4.5 mm

Die Size (Area)

30.15 mm²

Die Size (X)

6.7 mm

EAS/Avalanche Energy

40 mJ

Mode

Enhancement

Output Drivers

1

Polarity

N

RDS (on)

16 mΩ

RDS (on) (@10V) max

100 mΩ

Technology

OptiMOS™ 3

Thickness

250

VBRDSS max

250 V

VDS

250 V

VDS max

250 V

VGS(th) range

2 V to 4 V

Features

  • Industry’s lowest R DS(on)
  • Lowest Qg and Qgd
  • World’s lowest FOM

Description

  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Less paralleling required
  • System cost improvement
  • Easy-to-design products
  • Environmentally friendly

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