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IPC042N03L3
  • IPC042N03L3

IPC042N03L3

With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life.

Infineon Technologies IPC042N03L3 Product Info

16 April 2026 0

Parameters

Die Size (-) range

1.53 mm² to 2.78 mm²

Die Size (Area)

4.25 mm²

Die Size (Y)

1.53 mm

Die Size (X)

2.78 mm

EAS/Avalanche Energy

60 mJ

Mode

Enhancement

Output Drivers

1

Polarity

N

RDS (on)

0.83 mΩ

RDS (on) (@10V) max

50 mΩ

Technology

OptiMOS™ 3

Thickness

175

VBRDSS max

30 V

VDS

30 V

VDS max

30 V

VGS(th) range

1 V to 2.2 V

Features

  • Best-in-class on-state resistance
  • Benchmark switching performance due to lowest figure of merits R on x Q g and R on x Q gd
  • Low gate resistance
  • Excellent 5V gate drive performance
  • Optimized EMI behavior based on an integrated damping network
  • Super barrier diode may improved efficiency by upwards of 2%.

Description

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Highest efficiency
  • Smallest footprint and highest power density with S3O8 & CanPAK™
  • Easy to design-in
  • Can be driven from 5V system rail giving excellent performance

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