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IPB19DP10NM
  • IPB19DP10NM

IPB19DP10NM

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OptiMOS™ P-Channel MOSFET 100 V in D²PAK package targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in normal level featuring a wide RDS(on) range and improves efficiency at low loads.

Infineon Technologies IPB19DP10NM Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.62

ID (@25°C) max

-13.8 A

ID max

-13.8 A

IDpuls max

-55 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (TO-263)

Pin Count

3 Pins

Polarity

P

Ptot max

83 W

QG

-36 nC

QG (typ @10V)

-36 nC

RDS (on) (@10V) max

185 mΩ

RDS (on) max

185 mΩ

VDS max

-100 V

VGS(th) range

-2.1 V to -4 V

Features

  • High and low switching frequency
  • Avalanche ruggedness
  • Standard footprint surface mount package
  • Broad availability at disty partners

Description

  • Supports a wide variety of applications
  • Robust, reliable performance
  • Standard pinout for replacement
  • Increased security of supply

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