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IPB120N04S4L-02
  • IPB120N04S4L-02

IPB120N04S4L-02

Infineon Technologies IPB120N04S4L-02 Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.89

Country of Assembly (Last BE site, current, subject to change)

Mexico, Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Malaysia

ID (@25°C) max

120 A

IDpuls max

480 A

Launch year

2013

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK (PG-TO263-3)

Planned to be available until at least

2028

Polarity

N

Ptot max

158 W

QG (typ @10V) max

190 nC

QG (typ @10V)

143 nC

Qualification

Automotive

RDS (on) (@10V) max

1.7 mΩ

RthJC max

0.95 K/W

Technology

OptiMOS™T2

VDS max

40 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Features

  • N-channel-Logic Level-Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

Description

  • Highest current capability
  • Lowest switching and conduction losses
  • Highest thermal efficiency
  • Robust packages & superior quality
  • Optimized total gate charge
  • Smaller driver output stages

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