Product
0
IPA086N10N3 G
  • IPA086N10N3 G

IPA086N10N3 G

Active

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Infineon Technologies IPA086N10N3 G Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.65

Ciss

2990 pF

Coss

523 pF

ID (@25°C) max

45 A

IDpuls max

180 A

Operating Temperature range

-55 °C to 175 °C

Package

TO-220 FullPAK

Polarity

N

Ptot max

37.5 W

QG (typ @10V)

42 nC

RDS (on) (@10V) max

8.6 mΩ

Rth

4 K/W

VDS max

100 V

VGS(th) range

2 V to 3.5 V

VGS(th)

2.7 V

Apps

Automotive gateway

Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Low Q g and Q gd
  • Excellent gate charge
  • RoHS compliant-halogen free
  • MSL1 rated

Description

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8