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IPA083N10NM5S
  • IPA083N10NM5S

IPA083N10NM5S

Infineon’s power MOSFET 100V in TO-220 FullPAK package (IPA083N10NM5S) meets the requirements for improved system efficiency and at the same time reduces system costs. Infineon’s OptiMOS™ power MOSFET features low RDS(on) of 8.3mOhm improving efficiency. In addition, with its increased power density the new TO-220 FullPAK portfolio extension is the excellent solution for synchronous rectification. It is optimized for TV, desktop, adapter and gaming applications.

Infineon Technologies IPA083N10NM5S Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.89

ID (@ TC=25°C) max

50 A

ID (@25°C) max

50 A

IDpuls max

200 A

Operating Temperature range

-55 °C to 175 °C

Package

TO-220 FullPAK

Polarity

N

Ptot max

36 W

QG (typ @10V)

30 nC

RDS (on) (@10V) max

8.3 mΩ

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Low voltage overshoot
  • Low on-state resistance (RDS(on))
  • Electrically isolated package

Description

  • Less paralleling required
  • No heat to circuit board
  • Less heat generation
  • Fits TO-220 footprint

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