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IMZA75R011M2H
  • IMZA75R011M2H

IMZA75R011M2H

Active and preferred

Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 750 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Infineon Technologies IMZA75R011M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

116 A

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO247-4

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

11 mΩ

Technology

CoolSiC™ G2

VDS max

750 V

Apps

Automotive battery protection & disconnection, Auxiliary inverter, On-board charging (OBC)

Features

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available

Description

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

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