IMZA65R048M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. This 650V CoolSiC™ is built on a state-of-the-art trench MOSFET, optimized to allow no compromises in getting both the lowest switching losses for given on-state resistance in the application and the highest reliability in operation.

Infineon Technologies IMZA65R048M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max	100 A
Mounting	THT
Operating Temperature range	-55 °C to 175 °C
Package	TO247 4-pin (asymmetric leads)
Polarity	N
Ptot max	125 W
Qualification	Industrial
RDS (on) (@ Tj = 25°C) max	63 mΩ
RDS (on) (@ Tj = 25°C)	48 mΩ
Technology	CoolSiC™ G1
VDS max	650 V

Apps

Electric vehicle drivetrain system, Light electric vehicle solutions, Complete system solutions for smart TVs, EV charging, 1-phase string inverter solutions

Features

1st generation CoolSiC™
low gate charge
low stored energy in C_OSS
negligable Q_rr
flat C_OSS
flat R_DS(on) over temperature

Description

higher efficiency in hard switching
higher efficiency in soft switching
hard commutation on body diode
high reliability
Kelvin source
Kelvin source
increased creepage

Subscribe to Welllinkchips !

Your Name

* Email

ELECTRONIC COMPONENTS
All In One Distributor

IMZA65R048M1H

Infineon Technologies IMZA65R048M1H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

IMZA65R048M1H

Infineon Technologies IMZA65R048M1H Product Info

Parameters

Apps

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor