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IMZA120R012M2H
  • IMZA120R012M2H

IMZA120R012M2H

Active and preferred

CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Infineon Technologies IMZA120R012M2H Product Info

16 April 2026 0

Parameters

Ciss

4050 pF

Coss

176 pF

ID (@ TC=25°C) max

129 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247-4

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

480 W

Ptot (@ TA=25°C)

480 W

Ptot

480 W

Qgd

34 nC

QG

124 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

12 mΩ

RthJA max

62 K/W

RthJC max

0.31 K/W

Technology

CoolSiC™ G2

Tj max

200 °C

VDS max

1200 V

Apps

EV charging, Industrial motor drives and controls, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Wider max. VGS range from -10 V to +25 V
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • .XT interconnection technology
  • Tighter VGS(th) parameter distribution

Description

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable
  • Easy paralleling

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