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IMZ120R350M1H
  • IMZ120R350M1H

IMZ120R350M1H

CoolSiC™ MOSFET discrete 1200 V, 350 mΩ G1 in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. The SiC MOSFET offers the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Infineon Technologies IMZ120R350M1H Product Info

16 April 2026 1

Parameters

Ciss

182 pF

Coss

10 pF

ID (@25°C) max

4.7 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO-247-4

Pin Count

4 Pins

Polarity

N

Ptot (@25°C) max

60 W

Qgd

1.2 nC

QG (typ @18V)

5.3 nC

Qualification

Industrial

RDS (on) (@18V)

350 mΩ

RDS (on) (@ Tj = 25°C)

350 mΩ

RthJA max

62 K/W

RthJC max

2.5 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

EV charging, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Best in class switching losses
  • Best in class conduction losses
  • Benchmark high threshold voltage
  • Vth > 4 V
  • 0V turn-off gate voltage for easy
  • Simple gate drive
  • Wide gate-source voltage range
  • Robust and low loss body diode
  • Rated for hard commutation
  • Temp. ind. turnoff switching losses
  • Driver source pin
  • Optimized switching performance

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