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IMYR140R006M2H
  • IMYR140R006M2H

IMYR140R006M2H

Active and preferred

The CoolSiC™ MOSFET discrete 1400 V, 6 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.

Infineon Technologies IMYR140R006M2H Product Info

16 April 2026 0

Parameters

Ciss

9590 pF

Coss

336 pF

ID (@25°C) max

246 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO247-4-U08

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

974 W

Qgd

60 nC

QG

302 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

5.8 mΩ, 6 mΩ

RthJA max

62 K/W

RthJC max

0.15 K/W

Technology

CoolSiC™ G2

Tj max

175 °C

VDS max

1400 V

Apps

Battery energy storage (BESS), EV charging, General purpose motor drive, Photovoltaic

Features

  • VDSS = 1400 V at Tvj = 25°C
  • IDDC = 188 A at TC = 100°C
  • RDS(on)= 5.8 mΩ at VGS= 18 V, Tvj= 25°C
  • Very low switching losses
  • Package backside 3x reflow solderable
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology
  • Package with wide power pins (2 mm)

Description

  • Increased power density
  • Increased system output power
  • Improved overall efficiency
  • Robustness against transient overloads
  • Robustness against avalanche condition
  • Robustness against Miller effect
  • Ease of system design
  • Easy paralleling

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