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IMYH200R024M1H
  • IMYH200R024M1H

IMYH200R024M1H

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The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

Infineon Technologies IMYH200R024M1H Product Info

16 April 2026 13

Parameters

Ciss

4850 pF

Coss

161 pF

ID (@25°C) max

89 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

PG-TO247-4-PLUS-NT14

Pin Count

4 Pins

Polarity

N

Ptot (@ TA=25°C) max

576 W

Qgd

22 nC

QG

137 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

24 mΩ

RthJA max

62 K/W

RthJC max

0.26 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

2000 V

Apps

Battery energy storage (BESS), EV charging, Photovoltaic

Features

  • VDSS = 2000 V for high DC-link
  • Up to 1500 VDC
  • Very Low switching losses
  • Benchmark gate threshold voltage
  • VGS(th) = 4.5 V
  • Robust diode for hard commutation
  • .XT interconnection technology
  • Improved humidity robustness
  • Innovative HCC package with
  • 14 mm creepage distances
  • 5.5 mm clearance distances

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