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IMW65R048M1H
  • IMW65R048M1H

IMW65R048M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R048M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Infineon Technologies IMW65R048M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

100 A

Mounting

THT

Operating Temperature range

-55 °C to 175 °C

Package

TO247

Polarity

N

Ptot max

125 W

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

63 mΩ

RDS (on) (@ Tj = 25°C)

48 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

Medium voltage IBC (48 V), Telecommunications infrastructure, Complete system solutions for smart TVs, EV charging, DIN rail power supply solutions

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Description

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability

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