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IMT65R010M2H
  • IMT65R010M2H

IMT65R010M2H

Active and preferred

The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Infineon Technologies IMT65R010M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

168 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

TOLL

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

13 mΩ

RDS (on) (@ Tj = 25°C)

10 mΩ

RthJC max

0.22 K/W

Technology

CoolSiC™ G2

VDS max

650 V

Apps

Complete system solutions for smart TVs, Battery energy storage (BESS), Microinverter solutions, Heating ventilation and air conditioning (HVAC), Power conversion

Features

  • Excellent figures-of-merit (FOMs)
  • Best in class RDS(on)
  • Outstanding robustness
  • Flexible driving voltage range
  • Pin-to-pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • Tj,max=175°C
  • 12k-cycle in TCoB

Description

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design
  • Fully leverages SiC in a small footprint

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