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IMSQ120R053M2HH
  • IMSQ120R053M2HH

IMSQ120R053M2HH

Active and preferred

CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities. The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Infineon Technologies IMSQ120R053M2HH Product Info

16 April 2026 0

Parameters

Ciss

1010 pF

Coss

41 pF

ID (@25°C) max

38 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

PG-HDSOP-16

Pin Count

4 Pins

Polarity

N

Ptot max

182 W

Qgd

8 nC

QG

30 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

53 mΩ

RthJA max

62 K/W

RthJC max

0.82 K/W

Technology

CoolSiC™ G2

Tj max

200 °C

VDS max

1200 V

Apps

EV charging, General purpose motor drive, Servo motor drive and control, Photovoltaic, Online UPS

Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 32 A at TC = 100°C
  • RDS(on) = 53 mΩ, VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C 
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology 

Description

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower TCO cost or BOM cost

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