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IMLT40R011M2H
  • IMLT40R011M2H

IMLT40R011M2H

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The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Infineon Technologies IMLT40R011M2H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

144 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

TOLT

Polarity

N

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

14 mΩ

RDS (on) (@ Tj = 25°C)

11 mΩ

Technology

CoolSiC™ G2

VDS max

400 V

Features

  • 440 V blocking voltage
  • Lower FOMs compared to 650 V SiC MOSFETs
  • Fast commutation proof low Qfr body diode
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • Highly controllable
  • Low Voff overshoot during high dV/dt operation
  • .XT interconnection technology

Description

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

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