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IMCQ120R007M2H
  • IMCQ120R007M2H

IMCQ120R007M2H

Active and preferred

CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Infineon Technologies IMCQ120R007M2H Product Info

16 April 2026 0

Parameters

Ciss

8440 pF

Coss

287 pF

ID (@25°C) max

257 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

PG-HDSOP-22

Pin Count

22 Pins

Polarity

N

Ptot (@ TA=25°C) max

1172 W

Qgd

47.1 nC

QG

197.2 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

7.5 mΩ

RthJA max

67 K/W

RthJC max

0.13 K/W

Technology

CoolSiC™ G2

Tj max

200 °C

VDS max

1200 V

Apps

EV charging, Solid-state circuit breaker (SSCB), Low-voltage drives, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • VDSS = 1200 V @Tvj = 25°C
  • IDDC = 181 A @TC = 100°C
  • RDS(on) = 7.5 mΩ @VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

Description

  • Outstanding thermal performance
  • Increases energy efficiency
  • Higher power density
  • More compact and easier designs
  • Lower TCO cost or BOM cost

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