Product
0
IMBG65R260M1H
  • IMBG65R260M1H

IMBG65R260M1H

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R260M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in low power applications. It is optimized to enable max system performance, compactness and reliability.

Infineon Technologies IMBG65R260M1H Product Info

16 April 2026 0

Parameters

ID (@25°C) max

19 A

Mounting

SMT

Operating Temperature range

-55 °C to 175 °C

Package

D2PAK 7-pin

Polarity

N

Ptot max

65 W

Qualification

Industrial

RDS (on) (@ Tj = 25°C) max

346 mΩ

RDS (on) (@ Tj = 25°C)

260 mΩ

Technology

CoolSiC™ G1

VDS max

650 V

Apps

Uninterruptible power supplies (UPS)

Features

  • 1st generation CoolSiC™
  • low gate charge
  • low stored energy in COSS
  • negligable Qrr
  • flat COSS
  • flat RDS(on) over temperature

Description

  • higher efficiency in hard switching
  • higher efficiency in soft switching
  • hard commutation on body diode
  • high reliability
  • Kelvin source
  • Kelvin source

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8