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IMBG120R350M1H
  • IMBG120R350M1H

IMBG120R350M1H

The CoolSiC™1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Infineon Technologies IMBG120R350M1H Product Info

16 April 2026 1

Parameters

Ciss

196 pF

Coss

9 nF

ID (@25°C) max

4.7 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Pin Count

7 Pins

Polarity

N

Ptot (@ TA=25°C) max

65 W

Qgd

1.2 nC

QG

5.9 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

350 mΩ

RthJA max

62 K/W

RthJC max

2.3 K/W

Technology

CoolSiC™ G1

Tj max

175 °C

VDS max

1200 V

Apps

EV charging, Industrial motor drives and controls, General purpose motor drive, LED lighting system design, Hydrogen electrolysis, Photovoltaic, Uninterruptible power supplies (UPS)

Features

  • Very Low switching losses
  • Short-circuit withstand time, 3 µs
  • Fully controllable dV/dt
  • Benchmark gate threshold voltage
  • VGS(th) = 4.5 V
  • Robust against parasitic turn-on
  • 0V turn-off gate voltage applicable
  • Robust diode for hard commutation
  • .XT interconnection technology
  • Package creepage distances > 6.1 mm
  • And clearance distances, > 6.1 mm
  • Sense pin for optimized switching

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